Abstract
Mott transition in a two-dimensional electron gas in a doped quantum well is experimentally studied. The impurity band is observed at a doping level up to . This value is two orders of magnitude higher than the Mott transition in bulk GaAs (about ). This high density Mott transition is explained by a quantitative model involving the donor distribution in the wells.
- Received 3 September 2004
DOI:https://doi.org/10.1103/PhysRevB.70.233310
©2004 American Physical Society