Experimental evidence of a Mott transition in highly doped two-dimensional confined structures

Mathieu Carras, Vincent Berger, Xavier Marcadet, and Borge Vinter
Phys. Rev. B 70, 233310 – Published 20 December 2004; Erratum Phys. Rev. B 75, 089902 (2007)

Abstract

Mott transition in a two-dimensional electron gas in a doped GaAsAlGaAs quantum well is experimentally studied. The impurity band is observed at a doping level up to 1018cm3. This value is two orders of magnitude higher than the Mott transition in bulk GaAs (about 1016cm3). This high density Mott transition is explained by a quantitative model involving the donor distribution in the wells.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 3 September 2004

DOI:https://doi.org/10.1103/PhysRevB.70.233310

©2004 American Physical Society

Erratum

Erratum: Experimental evidence of a Mott transition in highly doped two-dimensional confined structures [Phys. Rev. B 70, 233310 (2004)]

Mathieu Carras, Vincent Berger, Xavier Marcadet, and Borge Vinter
Phys. Rev. B 75, 089902 (2007)

Authors & Affiliations

Mathieu Carras1,2, Vincent Berger2, Xavier Marcadet1, and Borge Vinter1

  • 1Thales Research and Technology, domaine de corbeville, Orsay F-91404, France
  • 2Laboratoire “Matériaux et Phénomènes Quantiques,” Université Denis Diderot Paris 7 case 7021, 2 place Jussieu, Paris 75251, France

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 70, Iss. 23 — 15 December 2004

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×