Diamond and β-tin structures of Si studied with quantum Monte Carlo calculations

D. Alfè, M. J. Gillan, M. D. Towler, and R. J. Needs
Phys. Rev. B 70, 214102 – Published 3 December 2004

Abstract

We have used diffusion quantum Monte Carlo (DMC) calculations to study the pressure-induced phase transition from the diamond to β-tin structure in silicon. The calculations employ the pseudopotential technique and systematically improvable B-spline basis sets. We show that in order to achieve a precision of 1GPa in the transition pressure the noncanceling errors in the energies of the two structures must be reduced to 30meVatom. Extensive tests on system size errors, nonlocal pseudopotential errors, basis-set incompleteness errors, and other sources of error, performed on periodically repeated systems of up to 432 atoms, show that all these errors together can be reduced to well below 30meVatom. The calculated DMC transition pressure is about 34GPa higher than the accepted experimental range of values, and we argue that the discrepancy may be due to the fixed-node error inherent in DMC techniques.

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  • Received 1 July 2004

DOI:https://doi.org/10.1103/PhysRevB.70.214102

©2004 American Physical Society

Authors & Affiliations

D. Alfè1,2 and M. J. Gillan2

  • 1Department of Earth Sciences, University College London, Gower Street, London WC1E 6BT, United Kingdom
  • 2Department of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT, United Kingdom

M. D. Towler and R. J. Needs

  • Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom

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Issue

Vol. 70, Iss. 21 — 1 December 2004

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