Ellipsometric study of the electronic structure of Ga1xMnxAs and low-temperature GaAs

K. S. Burch, J. Stephens, R. K. Kawakami, D. D. Awschalom, and D. N. Basov
Phys. Rev. B 70, 205208 – Published 15 November 2004

Abstract

We have measured the optical constants of Ga1xMnxAs from 0.62 to 6eV, using spectroscopic ellipsometry. The second derivatives of the dielectric function are examined through a critical point analysis, allowing us to inspect interband transitions from different points in k space. The evolution of the band structure over a broad doping range is determined. Specifically, the E1 critical point shifts to higher energies with increased doping of Mn, while all other critical points appear unaffected. The evolution of the critical points results from the interplay between band-gap renormalization due to ionized impurities and spd hybridization of the Mn induced impurity band with GaAs valence and conductions bands.

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  • Received 13 April 2004

DOI:https://doi.org/10.1103/PhysRevB.70.205208

©2004 American Physical Society

Authors & Affiliations

K. S. Burch1,*, J. Stephens2, R. K. Kawakami2,†, D. D. Awschalom2, and D. N. Basov1

  • 1Department of Physics, University of California, San Diego, California 92093-0319, USA
  • 2Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106, USA

  • *Electronic address: burch@physics.ucsd.edu
  • Permanent address: Department of Physics, University of California, Riverside, CA 92521.

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Vol. 70, Iss. 20 — 15 November 2004

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