Photoluminescence of p-doped quantum wells with strong spin splitting

P. Kossacki, H. Boukari, M. Bertolini, D. Ferrand, J. Cibert, S. Tatarenko, J. A. Gaj, B. Deveaud, V. Ciulin, and M. Potemski
Phys. Rev. B 70, 195337 – Published 23 November 2004

Abstract

The spectroscopic properties of a spin-polarized two-dimensional hole gas are studied in modulation doped Cd1xMnxTe quantum wells with variable carrier density up to 5×1011cm2. The giant Zeeman effect, which is characteristic of diluted magnetic semiconductors, induces a significant spin splitting even at very small values of the applied field. Several methods of measuring the carrier density (Hall effect, filling factors of the Landau levels at high field, various manifestations of Moss-Burstein shifts) are described and calibrated. The value of the spin splitting needed to fully polarize the hole gas shows a strong enhancement of the spin susceptibility of the hole gas due to the carrier-carrier interaction. At small values of the spin splitting, whatever the carrier density (nonzero) is, photoluminescence lines are due to the formation of charged excitons in the singlet state. Spectral shifts in photoluminescence and in transmission (including an “excitonic Moss-Bustein shift”) are observed and discussed in terms of excitations of the partially or fully polarized hole gas. At large spin splitting, and without changing the carrier density, the singlet state of the charged exciton is destabilized in favor of a triplet state configuration of holes. The binding energy of the singlet state is thus measured and found to be independent of the carrier density (in contrast to the splitting between the charged exciton and the neutral exciton lines). The state stable at large spin splitting is close to the neutral exciton at low carrier density, and close to an uncorrelated electron-hole pair at the largest values of the carrier density achieved. The triplet state gives rise to a characteristic double-line structure with an indirect transition to the ground state (with a strong phonon replica) and a direct transition to an excited state of the hole gas.

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  • Received 10 April 2004

DOI:https://doi.org/10.1103/PhysRevB.70.195337

©2004 American Physical Society

Authors & Affiliations

P. Kossacki1,2,3,*, H. Boukari1, M. Bertolini1, D. Ferrand1, J. Cibert1,4, S. Tatarenko1, J. A. Gaj2, B. Deveaud3, V. Ciulin3, and M. Potemski5

  • 1Groupe “Nanophysique et Semiconducteurs,” CEA-CNRS-Université Joseph Fourier Grenoble, Laboratoire de Spectrométrie Physique, BP87, F-38402 Saint Martin d’Hères Cedex, France
  • 2Institute of Experimental Physics, Warsaw University, Hoża 69, PL-00-681 Warszawa, Poland
  • 3Institute of Quantum Electronics and Photonics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
  • 4Laboratoire Louis Néel, CNRS, BP166, F-38042 Grenoble Cedex 9, France
  • 5Grenoble High Magnetic Field Laboratory, MPI-FKF/CNRS, 25 Avenue des Martyrs, F-38042 Grenoble Cedex 9, France

  • *Electronic address: Piotr.Kossacki@fuw.edu.pl

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Issue

Vol. 70, Iss. 19 — 15 November 2004

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