Gradual decrease of conductance of an adiabatic ballistic constriction below 2e2h

C.-T. Liang, O. A. Tkachenko, V. A. Tkachenko, D. G. Baksheyev, M. Y. Simmons, D. A. Ritchie, and M. Pepper
Phys. Rev. B 70, 195324 – Published 17 November 2004

Abstract

We have performed four-terminal conductance measurements of a one-dimensional (1D) channel in which it is possible to modulate the potential profile using three overlaying finger gates. In such a 1D ballistic structure we have observed that the conductance steps show a gradual decrease from 2e2hto0.97×2e2h with increasing negative finger gate voltage in a short, clean 1D constriction. We suggest this phenomenon is due to differing shifts of 1D subbands with changing spilt-gate voltage. Both a simple analytical estimate for an adiabatic constriction and a realistic modeling of the device give the same magnitude of the conductance decrease as observed in our experiments.

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  • Received 16 July 2004

DOI:https://doi.org/10.1103/PhysRevB.70.195324

©2004 American Physical Society

Authors & Affiliations

C.-T. Liang

  • Department of Physics, National Taiwan University, Taipei 106, Taiwan

O. A. Tkachenko, V. A. Tkachenko, and D. G. Baksheyev

  • Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, 630090 Russia

M. Y. Simmons

  • School of Physics, University of New South Wales, Sydney 2052, Australia

D. A. Ritchie and M. Pepper

  • Cavendish Laboratory, Madingley Road, Cambridge CB3 0HE, United Kingdom

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Issue

Vol. 70, Iss. 19 — 15 November 2004

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