Influence of carrier-carrier interaction on time-dependent intersubband absorption in a semiconductor quantum well

T. Müller, W. Parz, G. Strasser, and K. Unterrainer
Phys. Rev. B 70, 155324 – Published 22 October 2004

Abstract

Using ultrafast terahertz spectroscopy, we measure the temporal evolution of the intersubband absorption spectrum of a GaAsAl0.3Ga0.7As double-quantum-well structure with an energy spacing between the first two subbands smaller than the longitudinal optical phonon energy. We show that the interaction between the photoexcited carriers has a considerable influence on the time-dependent absorption. When varying the photoexcited sheet carrier density between 1×1010cm2 and more than 1×1012cm2, we find (i) a strong dependence of the intersubband scattering rate on the density of optically generated carriers, and (ii) a temporal shift of the intersubband resonance as the population in the second subband decays, i.e., as the photoexcited carriers relax into the quantum-well ground state.

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  • Received 7 May 2004

DOI:https://doi.org/10.1103/PhysRevB.70.155324

©2004 American Physical Society

Authors & Affiliations

T. Müller, W. Parz, G. Strasser, and K. Unterrainer

  • Institut für Photonik und Zentrum für Mikro- und Nanostrukturen, Technische Universität Wien, A-1040 Wien, Austria

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Issue

Vol. 70, Iss. 15 — 15 October 2004

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