Electroluminescence and photoluminescence excitation study of asymmetric coupled GaAsAlxGa1xAs V-groove quantum wires

K. F. Karlsson, H. Weman, M.-A. Dupertuis, K. Leifer, A. Rudra, and E. Kapon
Phys. Rev. B 70, 045302 – Published 2 July 2004

Abstract

We have studied systems of asymmetric coupled GaAs V-groove quantum wires pin diodes, in which the electrons and holes are injected into different wires. Despite the use of a 7nm thick AlGaAs tunnel barrier, and although we demonstrate that holes tunnel more slowly than electrons, we observe a very efficient and fast tunneling between the quantum wires (QWR’s). We attribute this to the achievement of a resonance between hole levels in the two QWR’s. Photoluminescence excitation experiments are compared with accurate calculations of the excitonic absorption yielding a level of carrier transfer of nearly 100%. Temperature-dependent electroluminescence exhibits clear effects of tunneling up to room temperature but cannot distinguish separate electron/hole tunneling from exciton tunneling.

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  • Received 26 June 2003
  • Publisher error corrected 7 July 2004

DOI:https://doi.org/10.1103/PhysRevB.70.045302

©2004 American Physical Society

Corrections

7 July 2004

Erratum

Authors & Affiliations

K. F. Karlsson*,†, H. Weman, M.-A. Dupertuis, K. Leifer, A. Rudra, and E. Kapon

  • Laboratory of Physics of Nanostructures, Institute of Quantum Electronics and Photonics, Swiss Federal Institute of Technology Lausanne, CH-1015 Lausanne, Switzerland

  • *Electronic address: freka@ifm.liu.se
  • Also at: Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden.

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Issue

Vol. 70, Iss. 4 — 15 July 2004

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