Carrier dynamics in an InGaAs dots-in-a-well structure formed by atomic-layer epitaxy

Young Min Park, Young Ju Park, Kwang Moo Kim, Jae Cheol Shin, Jin Dong Song, Jung Il Lee, and Keon-Ho Yoo
Phys. Rev. B 70, 035322 – Published 28 July 2004

Abstract

We investigated the effects of carrier dynamics on the temperature dependence of the photoluminescence (PL) of an InGaAs dots-in-a-well (DWELL) structure. The quantum dots (QDs) were formed by the atomic layer epitaxy (ALE) technique alternately supplying InAs and GaAs sources. It was found from the PL measurements at various temperatures that the DWELL structure was accomplished through the generation process of the intermediate layer between the quantum well (QW) and the QDs during the formation of the QDs inside a QW. The temperature dependence of the PL was fitted well with the thermal quenching equations on the basis of the rate equation model. The rate equations can be explained by the carrier dynamics, which included in the radiative recombination, the carrier thermal escape and the carrier capture process occurring in these three layers, i.e., QW, QD, and the intermediate layer.

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  • Received 16 August 2003

DOI:https://doi.org/10.1103/PhysRevB.70.035322

©2004 American Physical Society

Authors & Affiliations

Young Min Park*, Young Ju Park, Kwang Moo Kim, Jae Cheol Shin, Jin Dong Song, and Jung Il Lee

  • Nano Device Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130-650, Korea

Keon-Ho Yoo

  • Department of Physics, Kyung Hee University, Seoul 130-701, Korea

  • *Also at Department of Physics, Kyung Hee University, Seoul 130-701, Korea.
  • Author to whom correspondence should be addressed. Electronic address: yjpark@kist.re.kr

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Issue

Vol. 70, Iss. 3 — 15 July 2004

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