Radiatively limited dephasing in InAs quantum dots

W. Langbein, P. Borri, U. Woggon, V. Stavarache, D. Reuter, and A. D. Wieck
Phys. Rev. B 70, 033301 – Published 1 July 2004

Abstract

We measure the dephasing time of the exciton ground-state transition in In1xGaxAs quantum dots using a sensitive four-wave mixing technique. We find experimental evidence that the dephasing time is given only by the radiative lifetime at low temperatures. We demonstrate the tunability of the radiatively limited dephasing time from 400ps up to 2ns in a series of annealed In1xGaxAs quantum dots with increasing quantum-confinement energy from 69meVto330meV.

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  • Received 20 April 2004

DOI:https://doi.org/10.1103/PhysRevB.70.033301

©2004 American Physical Society

Authors & Affiliations

W. Langbein*, P. Borri, and U. Woggon

  • Experimentelle Physik IIb, Universität Dortmund, Otto-Hahm-Strasse 4, 44221 Dortmund, Germany

V. Stavarache, D. Reuter, and A. D. Wieck

  • Angewandte Festkörperphysik, Ruhr-Universität Bochum, Universitätsstrasse 150, 44780 Bochum, Germany

  • *Electronic address: langbein@fred.physik.uni-dortmund.de

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Issue

Vol. 70, Iss. 3 — 15 July 2004

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