Theory of optical signal amplification and processing by quantum-dot semiconductor optical amplifiers

M. Sugawara, H. Ebe, N. Hatori, M. Ishida, Y. Arakawa, T. Akiyama, K. Otsubo, and Y. Nakata
Phys. Rev. B 69, 235332 – Published 30 June 2004
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Abstract

This work presents a theory of optical signal amplification and processing by quantum-dot semiconductor optical amplifiers (SOA’s) based on the density matrix equations to treat electron-light interaction and the optical pulse propagation equations. The theory includes the linear optical response as well as the incoherent and coherent nonlinear response of the new devices with arbitrary spectral and spatial distribution of quantum dots in the active region under the multimode light. The incoherent nonlinear response was due to the incoherent spectral hole burning and the reduction in the carrier density by the stimulated emission. The coherent nonlinearity was due to the dynamic spectral hole burning caused by the population beating at the electronic states resonant to the multimode light and the carrier density pulsation caused by the carrier relaxation dynamics. Based on the theory, we numerically simulated the operation of quantum-dot SOA’s, and succeeded in presenting their diverse promising features in a very systematical manner. We expect amplifiers with low power consumption, high saturation power, broad gain bandwidth, and pattern-effect-free operation under gain saturation, and also signal processing devices to realize high-speed (40 to 160 Gb/s) pattern-effect-free wavelength conversion by the cross-gain modulation with low frequency chirping and symmetric highly-efficient 1 to 2 THz wavelength conversion by the nondegenerate four-wave mixing. We point out that the nonlinear optical response due to the spectral hole burning plays a decisive role in the high-speed optical signal processing. Many of the theoretical predictions in this paper agree well with recent experimental demonstrations of device performance. This work will help not only design practical quantum-dot devices working in the photonic networks but also understand how carrier dynamics relates to the optical response of quantum dots with optical gain under current injection.

  • Received 24 July 2003

DOI:https://doi.org/10.1103/PhysRevB.69.235332

©2004 American Physical Society

Authors & Affiliations

M. Sugawara*, H. Ebe, N. Hatori, and M. Ishida

  • Institute of Industrial Science and Nanoelectronics Collaborative Research Center, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 127-8172, Japan

Y. Arakawa

  • Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 127-8172, Japan

T. Akiyama, K. Otsubo, and Y. Nakata

  • Fujitsu Laboratories Ltd. and Fujitsu Ltd., 10-1 Morinosato-Wakamiya, Atsugi 240-01, Japan
  • Optoelectronic Industry and Technology Development Association (OITDA), 1-20-10 Sekiguchi, Bunkyo, Tokyo 112-0014, Japan

  • *Email address: msuga@iis.u-tokyo.ac.jp

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Vol. 69, Iss. 23 — 15 June 2004

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