Monte Carlo simulations of hole dynamics in SiGeSi terahertz quantum-cascade structures

Z. Ikonić, R. W. Kelsall, and P. Harrison
Phys. Rev. B 69, 235308 – Published 10 June 2004

Abstract

A detailed analysis of hole transport in cascaded pSiSiGe quantum well structures is performed using ensemble Monte Carlo simulations. The hole subband structure is calculated using the 6×6k·p model, and then used to find carrier relaxation rates due to the alloy disorder, acoustic and optical phonon scattering. The simulation accounts for the in-plane k-space anisotropy of both the hole subband structure and the scattering rates. Results are presented for prototype terahertz SiSiGe quantum cascade structures.

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  • Received 5 December 2003

DOI:https://doi.org/10.1103/PhysRevB.69.235308

©2004 American Physical Society

Authors & Affiliations

Z. Ikonić*, R. W. Kelsall, and P. Harrison

  • Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom

  • *Email address: eenzi@leeds.ac.uk

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Vol. 69, Iss. 23 — 15 June 2004

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