Enhancing the in-plane spatial ordering of quantum dots

W. Q. Ma, M. L. Hussein, J. L. Shultz, G. J. Salamo, T. D. Mishima, and M. B. Johnson
Phys. Rev. B 69, 233312 – Published 25 June 2004

Abstract

We report on the use of (In,Ga)AsGaAs multilayer stacking at elevated growth temperatures to produce enhanced in-plane spatial ordering. Cross-sectional transmission electron microscopy images reveal that the (In,Ga)As islands are vertically correlated while atomic force microscopy images demonstrate lateral ordering of quantum dots that are closely aligned along the [01¯1] direction as chains which are themselves positioned periodically along the [011] direction. The in-plane spatial ordering along the [01¯1] and [011] directions is directly seen by asymmetric (311) glancing exit x-ray diffraction with the x-ray beam along the respective direction. Growth studies as a function of temperature indicated that the observed lateral ordering results from enhanced surface diffusion and the vertical transfer of corresponding anisotropic strain pattern due to the anisotropy of surface diffusion.

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  • Received 10 November 2003

DOI:https://doi.org/10.1103/PhysRevB.69.233312

©2004 American Physical Society

Authors & Affiliations

W. Q. Ma*, M. L. Hussein, J. L. Shultz, and G. J. Salamo

  • Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA

T. D. Mishima and M. B. Johnson

  • Department of Physics & Astronomy, University of Oklahoma, Norman, Oklahoma 73019, USA

  • *Electronic address: wqma@uark.edu

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Issue

Vol. 69, Iss. 23 — 15 June 2004

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