Optical and electrical properties of vanadium and erbium in 4H-SiC

D. Prezzi, T. A. G. Eberlein, J.-S. Filhol, R. Jones, M. J. Shaw, P. R. Briddon, and S. Öberg
Phys. Rev. B 69, 193202 – Published 12 May 2004
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Abstract

Local-density-functional calculations are carried out on vanadium and erbium centers in 4H-SiC. Particular attention is paid to their electrical and optical properties. We find that both V and Er lie at Si sites and can exist in three charge states with deep donor and acceptor levels. While isolated VSi possesses intra-d and ionization induced optical transitions around 0.94 and 2.9 eV respectively, the intense and temperature stable intra-f optical transitions due to Er are unlikely to be due to an isolated Er defect. It is suggested that both impurities can trap H and N forming complexes which may limit the electrical efficiency of V and act as Er related exciton traps.

  • Received 30 January 2004

DOI:https://doi.org/10.1103/PhysRevB.69.193202

©2004 American Physical Society

Authors & Affiliations

D. Prezzi1,*, T. A. G. Eberlein1, J.-S. Filhol1, R. Jones1, M. J. Shaw2, P. R. Briddon2, and S. Öberg3

  • 1School of Physics, University of Exeter, Exeter EX4 4QL, United Kingdom
  • 2School of Natural Sciences, University of Newcastle upon Tyne, Newcastle upon Tyne NE1 7RU, United Kingdom
  • 3Department of Mathematics, University of Luleå, Luleå S95 187, Sweden

  • *Present address: Dipartimento di Fisica, Universita’ degli Studi di Bologna, Bologna, Italy.

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Vol. 69, Iss. 19 — 15 May 2004

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