Single-atomic-layered quantum wells built in wide-gap semiconductors LnCuOCh (Ln=lanthanide, Ch=chalcogen)

Kazushige Ueda, Hidenori Hiramatsu, Hiromichi Ohta, Masahiro Hirano, Toshio Kamiya, and Hideo Hosono
Phys. Rev. B 69, 155305 – Published 5 April 2004
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Abstract

LnCuOCh (Ln=lanthanide,Ch=chalcogen) layered oxychalcogenides are wide-gap p-type semiconductors composed of alternately stacked (Ln2O2)2+ oxide layers and (Cu2Ch2)2 chalcogenide layers. Energy band calculations revealed that CuCh hybridized bands only spread in the (Cu2Ch2)2 layers, which suggests that hole carriers in these bands are confined by the potential barriers formed by the (Ln2O2)2+ layers. Stepwise absorption spectra of a series of LnCuOCh experimentally verified that an exciton in the (Cu2Ch2)2 layers shows a two-dimensional behavior. These theoretical and experimental results indicate that LnCuOCh has “natural multiple quantum wells” built into its layered structure.

  • Received 29 July 2003

DOI:https://doi.org/10.1103/PhysRevB.69.155305

©2004 American Physical Society

Authors & Affiliations

Kazushige Ueda1,*, Hidenori Hiramatsu1,2, Hiromichi Ohta2, Masahiro Hirano2, Toshio Kamiya1,2, and Hideo Hosono1,2

  • 1Materials and Structures Laboratory, Tokyo Institute of Technology, 4259, Nagatsuta, Midori, Yokohama 226-8503, Japan
  • 2Hosono Transparent Electro-Active Materials (TEAM) Project, ERATO, Japan Science and Technology Agency, KSP C-1232, 3-2-1 Sakado, Takatsu, Kawasaki 213-0012, Japan

  • *Corresponding author. Currently at Department of Materials Science, Faculty of Engineering, Kyushu Institute of Technology, 1-1 Sensui Tobata Kitakyushu 804-8550, Japan. Email address: kueda@che.kyutech.ac.jp

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Vol. 69, Iss. 15 — 15 April 2004

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