Abstract
We investigate electronic transport properties of single-walled carbon nanotubes (SWNT’s) under hydrostatic pressure, using first-principles quantum transport calculations aided by molecular-dynamics simulation and continuum mechanics analysis. We demonstrate a pressure-induced metal-to-semiconductor transition in armchair SWNT’s, which provides a basis for designing nanoscale tunable pressure sensors.
- Received 3 September 2003
DOI:https://doi.org/10.1103/PhysRevB.69.153406
©2004 American Physical Society
