Electron conduction in two-dimensional GaAs1yNy channels

D. Fowler, O. Makarovsky, A. Patanè, L. Eaves, L. Geelhaar, and H. Riechert
Phys. Rev. B 69, 153305 – Published 15 April 2004
PDFExport Citation

Abstract

We study the conductivity of a two-dimensional electron gas in modulation-doped n-type GaAs1yNy/(AlGa)As quantum well heterostructures. We find that the nature of the electrical conduction in the GaAs1yNy channel is band-like or hopping-like depending on N content, carrier concentration, and temperature. We show that when there is a sufficient carrier concentration in the channel, the conduction occurs through the extended conduction band states of GaAs1yNy. In this band conduction regime the electron mobility is shown to be limited by electron scattering by nitrogen atoms. This mechanism dominates over inelastic collisions by phonons even at room temperature.

  • Received 3 December 2003

DOI:https://doi.org/10.1103/PhysRevB.69.153305

©2004 American Physical Society

Authors & Affiliations

D. Fowler, O. Makarovsky, A. Patanè*, and L. Eaves

  • School of Physics and Astronomy, University of Nottingham, NG7 2RD, United Kingdom

L. Geelhaar and H. Riechert

  • Infineon Technologies, Corporate Research Photonics, 81730 Munich, Germany

  • *Electronic address: amalia.patane@nottingham.ac.uk

References (Subscription Required)

Click to Expand
Issue

Vol. 69, Iss. 15 — 15 April 2004

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×