Ballistic magnetoresistance of electroplated nickel devices

Ge Yi
Phys. Rev. B 69, 132405 – Published 8 April 2004
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Abstract

Electroplated nickel nanojunctions (NJs) showing ballistic magnetoresistance up to 100 000% could be the potential workhorse to drive the next generation of magnetic storage beyond one trillion bits per square inch. Understanding the mechanism of this kind of device is extremely important for both academia and industry. In this paper, the detailed oxidation process and the structures of junctions after deposition are analyzed. Depending on the details of structures within the junction, a device of this kind can work as a multibarrier tunneling magnetoresistance (MB-TMR) device, Coulomb blockade enhanced MB-TMR, or even a spin-dependent atomiclike quantum dot. In terms of device fabrication, better control of the oxidation after plating is crucial.

  • Received 22 October 2003

DOI:https://doi.org/10.1103/PhysRevB.69.132405

©2004 American Physical Society

Authors & Affiliations

Ge Yi*

  • Department of Applied Physics, Hunan University, Changsha, Hunan 410082, People’s Republic of China;
  • Department of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ, United Kingdom;
  • Department of Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, United Kingdom

  • *Send correspondence to: Research and Development Department, Seagate Technology NI, Springtown Industrial Estate, Londonderry BT48 0BF, NI, UK. Email address: Gary.Yi@seagate.com

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Vol. 69, Iss. 13 — 1 April 2004

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