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Writing spin in a quantum dot with ferromagnetic and superconducting electrodes

Yu Zhu, Tsung-han Lin, and Qing-feng Sun
Phys. Rev. B 69, 121302(R) – Published 9 March 2004
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Abstract

We propose an efficient mechanism for the operation of writing spin in a quantum dot, which is an ideal candidate for qubit. The idea is based on the Andreev reflection induced spin polarization (ARISP) in a ferromagnetic/quantum-dot/superconductor system. We find that on the resonance of Andreev reflection, the spin polarization of quantum dot strongly depends on the magnetization of ferromagnetic electrode, and the sign of the spin polarization is controllable by bias voltage. In the presence of intradot interaction, we show that ARISP effect can still survive as long as the charging energy U is comparable to the superconducting gap Δ. Detailed conditions and properties of ARISP are also discussed.

  • Received 5 January 2004

DOI:https://doi.org/10.1103/PhysRevB.69.121302

©2004 American Physical Society

Authors & Affiliations

Yu Zhu and Tsung-han Lin*

  • State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, China

Qing-feng Sun

  • Center for the Physics of Materials and Department of Physics, McGill University, Montreal, PQ, Canada H3A 2T8

  • *Author to whom correspondence should be addressed.

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Issue

Vol. 69, Iss. 12 — 15 March 2004

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