Properties of conduction-band dilute-magnetic-semiconductor quantum wells in an in-plane magnetic field: A density of states profile that is not steplike

We examine how an in-plane magnetic field B modifies the density of states (DOS) in narrow-to-wide, conduction-band dilute-magnetic semiconductor quantum wells. We demonstrate that the DOS diverges significantly from the ideal steplike two-dimensional electron gas form and this causes severe changes to the physical properties, e.g., to the spin-subband populations, the internal and free energy, the Shannon entropy, and the in-plane magnetization M. We predict a considerable fluctuation of M in cases of vigorous competition between spatial and magnetic confinement.