Abstract
We investigate quantum corrections to the conductivity due to the interference of electron-electron (electron-phonon) scattering and elastic electron scattering from impurities and defects in weakly disordered conductors. The interference corrections are proportional to the Drude conductivity and have various temperature dependences. The electron-electron interaction results in a correction in bulk conductors. In a quasi-two-dimensional (quasi-2D) conductor, is the thickness, and is the Fermi velocity), with 3D electron spectrum this correction is linear in temperature and differs from that for 2D electrons [G. Zala et al., Phys. Rev. B 64, 214204 (2001)] by a numerical factor. In quasi-one-dimensional conductors with 3D and 2D electron spectra (a wire with radius and a strip with width temperature-dependent corrections are proportional to The value and sign of the corrections depend on the strength of the electron-electron interaction in the triplet channel. The electron interaction via exchange of virtual phonons gives the correction. In bulk semiconductors the interaction of electrons with thermal phonons via the screened deformation potential results in a term and via unscreened deformation potential leads to a term. For a two-dimensional electron gas in heterostructures, the screened deformation potential gives rise to a term and the unscreened deformation potential leads to a term. At low temperatures the interference of electron-electron and electron-impurity scattering dominates in the temperature-dependent conductivity. At higher temperatures the conductivity is determined by the electron-phonon-impurity interference, which prevails over pure electron-phonon scattering in a wide temperature range, which extends with increasing disorder.
- Received 2 October 2003
DOI:https://doi.org/10.1103/PhysRevB.69.075310
©2004 American Physical Society