Magnetophonon resonance in high-density high-mobility quantum well systems

C. Faugeras, D. K. Maude, G. Martinez, L. B. Rigal, C. Proust, K. J. Friedland, R. Hey, and K. H. Ploog
Phys. Rev. B 69, 073405 – Published 25 February 2004
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Abstract

We have investigated the magnetophonon resonance (MPR) effect in a series of single GaAs quantum well samples which are symmetrically modulation doped in the adjacent short period AlAs/GaAs superlattices. Two distinct MPR series are observed originating from the Γ and X electrons interacting with the GaAs and AlAs longitudinal optic (LO) phonons respectively. This confirms unequivocally the presence of X electrons in the AlAs quantum well of the superlattice previously invoked to explain the high electron mobility in these structures [Friedland et al., Phys. Rev. Lett 77, 4616 (1996)]

  • Received 11 September 2003

DOI:https://doi.org/10.1103/PhysRevB.69.073405

©2004 American Physical Society

Authors & Affiliations

C. Faugeras, D. K. Maude, and G. Martinez

  • Grenoble High Magnetic Field Laboratory, Max Planck Institut für Festkörperforschung and Centre National de la Recherche Scientifique, BP 166, 38042 Grenoble Cedex 9, France

L. B. Rigal and C. Proust

  • Laboratoire National des Champs Magnétiques Pulses, 143, avenue de Rangueil, F31432, Toulouse, Cedex 4, France

K. J. Friedland, R. Hey, and K. H. Ploog

  • Paul Drude Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany

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Vol. 69, Iss. 7 — 15 February 2004

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