From localization to Landau quantization in a two-dimensional GaAs electron system containing self-assembled InAs quantum dots

Gil-Ho Kim, C.-T. Liang, C. F. Huang, J. T. Nicholls, D. A. Ritchie, P. S. Kim, C. H. Oh, J. R. Juang, and Y. H. Chang
Phys. Rev. B 69, 073311 – Published 27 February 2004
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Abstract

We have studied insulator–quantum Hall–insulator (I-QH-I) transitions in a gated two-dimensional GaAs electron gas containing InAs quantum dots. In this system Shubnikov–de Haas oscillations are observed in both the low-field and high-field insulating regimes, showing that Landau quantization and localization can coexist. A phase diagram is constructed based on our experimental results, and we see that the critical points of the I-QH-I transitions do not correspond to crossover from localization to Landau quantization. Moreover, good scaling behavior is observed on both sides of low- and high-field I-QH transitions.

  • Received 20 December 2002

DOI:https://doi.org/10.1103/PhysRevB.69.073311

©2004 American Physical Society

Authors & Affiliations

Gil-Ho Kim1,2, C.-T. Liang3, C. F. Huang4, J. T. Nicholls2, D. A. Ritchie2, P. S. Kim5, C. H. Oh5, J. R. Juang3, and Y. H. Chang3

  • 1Department of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Korea
  • 2Cavendish Laboratory, Madingley Road, Cambridge CB3 0HE, United Kingdom
  • 3Department of Physics, National Taiwan University, Taipei 106, Taiwan
  • 4National Measurement Laboratory, Center for Measurement Standards, Industrial Technology Research Institute, Hsinchu 300, Taiwan
  • 5Department of Physics, Hanyang University, Seoul 133-791, Korea

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Vol. 69, Iss. 7 — 15 February 2004

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