Infrared-induced dark states and coherent population trapping of excitons in quantum well structures

S. M. Sadeghi and W. Li
Phys. Rev. B 69, 045311 – Published 22 January 2004
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Abstract

We study enhancement of the 2s state emission intensity of the e1-hh1 excitons via generation of dark states. This process is shown for a In0.43Ga0.57As/InP quantum well structure interacting with a single infrared laser near resonance with the transition between e1 and e2. Via generation of strong nonparabolic hole dispersion, the tensile strain of this structure enhances the dipole moments of the nonallowed transitions between the 2s states of the e1-hh1 and the 1s states of e2-hh1 excitons. We show that, due to the simultaneous coupling of these transitions and those between the 1s states of the e1-hh1 and e2-hh1 excitons (allowed transitions), the infrared field can generate dark states, coherently pumping the 2s states of e1-hh1 excitons and dramatically increasing their emission intensities. We also show that when the allowed and nonallowed transitions are driven by two resonant infrared field beams, coherent population trapping of excitons of the e1-hh1 excitons occurs.

  • Received 1 June 2003

DOI:https://doi.org/10.1103/PhysRevB.69.045311

©2004 American Physical Society

Authors & Affiliations

S. M. Sadeghi*

  • Department of Physics, University of Toronto, 60 St. George Street, Toronto, Canada M5S 1A7

W. Li

  • Department of Chemistry and Engineering Physics, University of Wisconsin-Platteville, Platteville, Wisconsin 53818, USA,
  • Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1

  • *Present address: Photonami Inc., 50 Mural Street, Richmond Hill, Ontario, Canada L4B 1E4. Electronic address: sm.sadeghi@utoronto.ca
  • Present address: Department of Chemistry and Engineering Physics, University of Wisconsin-Platteville, Platteville, WI 53818, USA.

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Vol. 69, Iss. 4 — 15 January 2004

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