Two-dimensional hole precession in an all-semiconductor spin field effect transistor

Marco G. Pala, Michele Governale, Jürgen König, Ulrich Zülicke, and Giuseppe Iannaccone
Phys. Rev. B 69, 045304 – Published 9 January 2004
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Abstract

We present a theoretical study of a spin field-effect transistor realized in a quantum well formed in a p-doped ferromagnetic-semiconductor–nonmagnetic-semiconductor-ferromagnetic-semiconductor hybrid structure. Based on an envelope-function approach for the hole bands in the various regions of the transistor, we derive the complete theory of coherent transport through the device, which includes both heavy- and light-hole subbands, proper modeling of the mode matching at interfaces, integration over injection angles, Rashba spin precession, interference effects due to multiple reflections, and gate-voltage dependences. Numerical results for the device current as a function of externally tunable parameters are in excellent agreement with approximate analytical formulas.

  • Received 15 July 2003

DOI:https://doi.org/10.1103/PhysRevB.69.045304

©2004 American Physical Society

Authors & Affiliations

Marco G. Pala

  • Institut für Theoretische Festkörperphysik, Universität Karlsruhe, D-76128 Karlsruhe, Germany
  • Dipartimento di Ingegneria dell’Informazione, via Diotisalvi 2, I-56126 Pisa, Italy

Michele Governale

  • Institut für Theoretische Festkörperphysik, Universität Karlsruhe, D-76128 Karlsruhe, Germany
  • NEST-INFM & Scuola Normale Superiore, piazza dei Cavalieri 7, I-56100 Pisa, Italy

Jürgen König

  • Institut für Theoretische Festkörperphysik, Universität Karlsruhe, D-76128 Karlsruhe, Germany
  • Institut für Theoretische Physik III, Ruhr-Universität Bochum, D-44780 Bochum, Germany

Ulrich Zülicke

  • Institut für Theoretische Festkörperphysik, Universität Karlsruhe, D-76128 Karlsruhe, Germany
  • Institute of Fundamental Sciences, Massey University, Private Bag 11 222, Palmerston North, New Zealand

Giuseppe Iannaccone

  • Dipartimento di Ingegneria dell’Informazione, via Diotisalvi 2, I-56126 Pisa, Italy

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Vol. 69, Iss. 4 — 15 January 2004

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