• Rapid Communication

Phonon sidebands in exciton and biexciton emission from single GaAs quantum dots

E. Peter, J. Hours, P. Senellart, A. Vasanelli, A. Cavanna, J. Bloch, and J. M. Gérard
Phys. Rev. B 69, 041307(R) – Published 26 January 2004
PDFExport Citation

Abstract

We report on the observation of asymmetric phonon sidebands on both the exciton and biexciton emission lines in single GaAs monolayer fluctuation quantum dots. The contribution of phonon sidebands to the emission line is larger for the biexciton than for the exciton. We model the exciton line shape by means of a nonperturbative coupling with acoustic phonons and show that energetic confinement is an important clue to understand why phonon sidebands are sometimes observed and sometimes not. Finally, we discuss the extension of our model to the biexciton case.

  • Received 24 October 2003

DOI:https://doi.org/10.1103/PhysRevB.69.041307

©2004 American Physical Society

Authors & Affiliations

E. Peter1, J. Hours1, P. Senellart1,*, A. Vasanelli1, A. Cavanna1, J. Bloch1, and J. M. Gérard2

  • 1CNRS-Laboratoire de Photonique et Nanostructures, Route de Nozay, 91460 Marcoussis, France
  • 2CEA/DRFMC/SP2M, Nanophysics and Semiconductors Laboratory, 17, rue des Martyrs, 38054 Grenoble Cedex, France

  • *Electronic address: pascale.senellart@lpn.cnrs.fr

References (Subscription Required)

Click to Expand
Issue

Vol. 69, Iss. 4 — 15 January 2004

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×