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Emission spectrum of a single quantum dot embedded in a pn junction

David M.-T. Kuo and Yia-Chung Chang
Phys. Rev. B 69, 041306(R) – Published 22 January 2004
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Abstract

We present theoretical studies of the spontaneous emission spectrum of an isolated self-assembled quantum dot (SAQD) embedded in a pn junction under bias. Keldysh’s nonequilibrium Green’s function approach is used to derive a set of nonlinear coupled rate equations, which are then solved to obtain the steady-state electron and hole occupation numbers. Combining this approach with a simple but realistic effective mass model, we calculate the emission spectrum of a SAQD and examine the relative peak strengths of exciton, positive and negative trions, and biexciton as functions of carrier tunneling rate. Our theoretical studies provide satisfactory explanation for the behavior of the emission spectrum observed in many recent experiments.

  • Received 26 September 2003

DOI:https://doi.org/10.1103/PhysRevB.69.041306

©2004 American Physical Society

Authors & Affiliations

David M.-T. Kuo1,2 and Yia-Chung Chang1

  • 1Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
  • 2Department of Electrical Engineering, National Central University, Chung-Li, Taiwan, Republic of China

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Vol. 69, Iss. 4 — 15 January 2004

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