Observation and modeling of the time-dependent descreening of internal electric field in a wurtzite GaN/Al0.15Ga0.85N quantum well after high photoexcitation

P. Lefebvre, S. Kalliakos, T. Bretagnon, P. Valvin, T. Taliercio, B. Gil, N. Grandjean, and J. Massies
Phys. Rev. B 69, 035307 – Published 12 January 2004
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Abstract

We use the intense, 5-ns-long, excitation pulses provided by the fourth harmonic of a neodymium-doped yttrium aluminum garnet (Nd:YAG) laser to induce a strong high-energy shift of the photoluminescence of a 7.8-nm-wide GaN/Al0.15Ga0.85N single quantum well. We follow the complex relaxation dynamics of the energy and of the intensity of this emission, by using a time-resolved photoluminescence setup. We obtain excellent agreement between our experimental results and those of our finite-element modeling of the time-dependent energy and oscillator strength. The model, based on a self-consistent solution of the Schrödinger and Poisson equations, accounts for the three important sources of energy shifts: (1) the screening of the electric field present along the growth axis of the well, by accumulation of electron-hole dipoles, (2) the band-gap renormalization induced by many-body interactions, and (3) the filling of the conduction and valence bands.

  • Received 23 July 2003

DOI:https://doi.org/10.1103/PhysRevB.69.035307

©2004 American Physical Society

Authors & Affiliations

P. Lefebvre, S. Kalliakos, T. Bretagnon, P. Valvin, T. Taliercio, and B. Gil

  • Groupe d’Etude des Semiconducteurs, CNRS, Université Montpellier II, Case Courrier 074, 34095 Montpellier Cedex 5, France

N. Grandjean and J. Massies

  • Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, CNRS, Rue Bernard Grégory, 06560 Valbonne, France

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Vol. 69, Iss. 3 — 15 January 2004

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