Linear in-plane magnetoconductance and spin susceptibility of a two-dimensional electron gas on a vicinal silicon surface

Y. Y. Proskuryakov, Z. D. Kvon, and A. K. Savchenko
Phys. Rev. B 69, 033304 – Published 30 January 2004

Abstract

In this work we have studied the parallel magnetoresistance of a two-dimensional electron gas near a vicinal silicon surface. An unusual, linear magnetoconductance is observed in the fields up to B=15T, which we explain by the effect of spin polarization on impurity scattering. This linear magnetoresistance shows strong anomalies near the boundaries of the minigap in the electron spectrum of the vicinal system.

  • Received 29 January 2003

DOI:https://doi.org/10.1103/PhysRevB.69.033304

©2004 American Physical Society

Authors & Affiliations

Y. Y. Proskuryakov1,*, Z. D. Kvon2, and A. K. Savchenko1

  • 1School of Physics, University of Exeter, Stocker Road, Exeter EX4 4QL, United Kingdom
  • 2Institute of Semiconductor Physics, Novosibirsk 630090, Russia

  • *Present address: Physics Department, Royal Holloway, University of London, Egham, Surrey TW20 0EX, U.K.

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Issue

Vol. 69, Iss. 3 — 15 January 2004

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