Ab initio description of the diluted magnetic semiconductor Ga1xMnxAs: Ferromagnetism, electronic structure, and optical response

L. Craco, M. S. Laad, and E. Müller-Hartmann
Phys. Rev. B 68, 233310 – Published 31 December 2003
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Abstract

Motivated by a study of various experiments describing the electronic and magnetic properties of the diluted magnetic semiconductor Ga1xMnxAs, we investigate its physical response in detail using a combination of first-principles band structure with methods based on dynamical mean field theory to incorporate strong, dynamical correlations, and intrinsic as well as extrinsic disorder in one single theoretical picture. We show how ferromagnetism is driven by double exchange (DE), in agreement with very recent observations, along with a good quantitative description of the details of the electronic structure, as probed by scanning tunneling microscopy and optical conductivity. Our results show how ferromagnetism can be driven by DE even in diluted magnetic semiconductors with small carrier concentration.

  • Received 6 October 2003

DOI:https://doi.org/10.1103/PhysRevB.68.233310

©2003 American Physical Society

Authors & Affiliations

L. Craco, M. S. Laad, and E. Müller-Hartmann

  • Institut für Theoretische Physik, Universität zu Köln, Zülpicher Strasse, D-50937 Köln, Germany

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Issue

Vol. 68, Iss. 23 — 15 December 2003

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