Acoustic phonon sidebands in the emission line of single InAs/GaAs quantum dots

I. Favero, G. Cassabois, R. Ferreira, D. Darson, C. Voisin, J. Tignon, C. Delalande, G. Bastard, Ph. Roussignol, and J. M. Gérard
Phys. Rev. B 68, 233301 – Published 4 December 2003
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Abstract

We present an experimental and theoretical study of the existence of acoustic phonon sidebands in the emission line of single self-assembled InAs/GaAs quantum dots. Temperature-dependent photoluminescence measurements reveal a deviation from a Lorentzian profile with the appearance of lateral sidebands. We obtain an excellent agreement with calculations done in the framework of the Huang-Rhys formalism. We conclude that the only relevant parameter for the observation of acoustic phonon sidebands is the linewidth of the central zero-phonon line. At high temperature, the quasi-Lorentzian quantum dot line appears to be fully determined by the acoustic phonon sidebands.

  • Received 13 June 2003

DOI:https://doi.org/10.1103/PhysRevB.68.233301

©2003 American Physical Society

Authors & Affiliations

I. Favero, G. Cassabois*, R. Ferreira, D. Darson, C. Voisin, J. Tignon, C. Delalande, G. Bastard, and Ph. Roussignol

  • LPMC-Ecole Normale Supérieure, 24 rue Lhomond, 75231 Paris Cedex 05, France

J. M. Gérard

  • CEA-CNRS-UJF “Nanophysics and Semiconductors” Laboratory, CEA/DRFMC/SP2M, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France

  • *Electronic address: Guillaume.Cassabois@lpmc.ens.fr

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Vol. 68, Iss. 23 — 15 December 2003

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