Microcavity effect on the electron-hole relative motion in semiconductor quantum wells

D. S. Citrin and J. B. Khurgin
Phys. Rev. B 68, 205325 – Published 24 November 2003
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Abstract

We rigorously find that for a quantum well embedded within a semiconductor microcavity near resonance with the 1s-exciton transition, the upper (lower) polariton is associated with an electron-hole relative-motion probability-density distribution larger (smaller) than the two-dimisional exciton Bohr radius if half the normal-mode splitting exceeds the 1s-exciton binding energy. In this case, the exciton continuum comprises an essential part of the description of the upper mode, leading to a strong asymmetry of the microcavity lines observed in transmission.

  • Received 13 May 2003

DOI:https://doi.org/10.1103/PhysRevB.68.205325

©2003 American Physical Society

Authors & Affiliations

D. S. Citrin1 and J. B. Khurgin2

  • 11School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250, USA
  • 2Department of Electrical and Computer Engineering, The Johns Hopkins University, Baltimore, Maryland 21218, USA

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Vol. 68, Iss. 20 — 15 November 2003

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