Discrete states of conduction electrons bound to magnetoacceptors in quantum wells

S. Bonifacie, Y. M. Meziani, S. Juillaguet, C. Chaubet, A. Raymond, W. Zawadzki, V. Thierry-Mieg, and J. Zeman
Phys. Rev. B 68, 165330 – Published 20 October 2003
PDFExport Citation

Abstract

Discrete states of conduction electrons bound to ionized acceptors are observed in intraband magneto-optical experiments on Be-doped GaAs/Ga0.67Al0.33As quantum wells. The electrons are bound to acceptors by a joint effect of the quantum well and an external magnetic field. The observed transition energies are successfully described using states of single magnetoacceptors. The energies show evidence for oscillatory screening of acceptor potentials. Also, two disorder modes of the cyclotron resonance related to acceptor potential fluctuations are observed at higher filling factors.

  • Received 31 July 2003

DOI:https://doi.org/10.1103/PhysRevB.68.165330

©2003 American Physical Society

Authors & Affiliations

S. Bonifacie, Y. M. Meziani, S. Juillaguet, C. Chaubet, and A. Raymond

  • Groupe d’Etude des Semiconducteurs, UMR CNRS 5650, Université Montpellier II, 34095 Montpellier, France

W. Zawadzki

  • Institute of Physics, Polish Academy of Sciences, 02668 Warsaw, Poland

V. Thierry-Mieg

  • Laboratoire de Photonique et de Nanostructures, CNRS, 91460 Marcoussis, France

J. Zeman

  • Laboratoire des Champs Magnétiques Intenses, CNRS, 38042 Grenoble, France

References (Subscription Required)

Click to Expand
Issue

Vol. 68, Iss. 16 — 15 October 2003

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×