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Dependence of the ionization energy of shallow donors and acceptors in silicon on the host isotopic mass

D. Karaiskaj, T. A. Meyer, M. L. W. Thewalt, and M. Cardona
Phys. Rev. B 68, 121201(R) – Published 16 September 2003
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Abstract

A comparison of the infrared absorption spectra of isotopically pure 28Si and 30Si reveals small shifts in the transition energies for both the shallow donor phosphorus and the shallow acceptor boron. The impurity binding energies for both species are slightly larger in 30Si than in 28Si. A similar effect was earlier observed for the boron acceptor in 13C vs 12C diamond, and later explained as resulting from a change in the ground and excited state binding energies due to the dependence of the hole effective mass on the host isotopic composition. Here we show that the results for both donors and acceptors in Si can be explained by the same mechanism, with the additional inclusion of the isotopic dependence of the dielectric constant.

  • Received 23 May 2003

DOI:https://doi.org/10.1103/PhysRevB.68.121201

©2003 American Physical Society

Authors & Affiliations

D. Karaiskaj, T. A. Meyer, and M. L. W. Thewalt

  • Department of Physics, Simon Fraser University, Burnaby, BC, Canada V5A 1S6

M. Cardona

  • Max-Planck-Institut für Festkörperforschung, D-70569 Stuttgart, Germany

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Vol. 68, Iss. 12 — 15 September 2003

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