Abstract
A comparison of the infrared absorption spectra of isotopically pure and reveals small shifts in the transition energies for both the shallow donor phosphorus and the shallow acceptor boron. The impurity binding energies for both species are slightly larger in than in A similar effect was earlier observed for the boron acceptor in vs diamond, and later explained as resulting from a change in the ground and excited state binding energies due to the dependence of the hole effective mass on the host isotopic composition. Here we show that the results for both donors and acceptors in Si can be explained by the same mechanism, with the additional inclusion of the isotopic dependence of the dielectric constant.
- Received 23 May 2003
DOI:https://doi.org/10.1103/PhysRevB.68.121201
©2003 American Physical Society