Anisotropic spin-splitting and spin-relaxation in asymmetric zinc blende semiconductor quantum structures

J. Kainz, U. Rössler, and R. Winkler
Phys. Rev. B 68, 075322 – Published 29 August 2003
PDFExport Citation

Abstract

Spin relaxation due to the D’yakonov-Perel’ mechanism is intimately related with the spin splitting of the electronic states. We determine the spin relaxation rates from anisotropic spin splittings of electron subbands in n(001) zinc blende semiconductor quantum structures calculated self-consistently in the multiband envelope function approach. The giant anisotropy of spin relaxation rates found for different spin components in the (001) plane can be ascribed to the interplay between the bulk and quantum well inversion asymmetry. One of the in-plane relaxation rates may exhibit a striking nonmonotonous dependence on the carrier density.

  • Received 1 April 2003

DOI:https://doi.org/10.1103/PhysRevB.68.075322

©2003 American Physical Society

Authors & Affiliations

J. Kainz* and U. Rössler

  • Institut für Theoretische Physik, Universität Regensburg, 93040 Regensburg, Germany

R. Winkler

  • Institut für Technische Physik III, Staudtstrasse 7, D-91058 Erlangen, Germany

  • *Electronic address: josef.kainz@physik.uni-regensburg.de

References (Subscription Required)

Click to Expand
Issue

Vol. 68, Iss. 7 — 15 August 2003

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×