Self-consistent Coulomb effects and charge distribution of quantum dot arrays

This paper considers the self-consistent Coulomb interaction within arrays of self-assembled InAs quantum dots (QD’s) which are embedded in a $\mathrm{pn}$ structure. Strong emphasis is being put on the statistical occupation of the electronic QD states which has to be solved self-consistently with the actual three-dimensional potential distribution. A model which is based on a Green’s function formalism including screening effects is used to calculate the interaction of QD carriers within an array of QD’s, where screening due to the inhomogeneous bulk charge distribution is taken into acount. We apply our model to simulate capacitance-voltage $(C-V)$ characteristics of a $\mathrm{pn}$ structure with embedded QD’s. Different size distributions of QD’s and ensembles of spatially perodic and randomly distributed arrays of QD’s are investigated.