Single-band model for diluted magnetic semiconductors: Dynamical and transport properties and relevance of clustered states

G. Alvarez and E. Dagotto
Phys. Rev. B 68, 045202 – Published 29 July 2003
PDFExport Citation

Abstract

Dynamical and transport properties of a simple single-band spin-fermion lattice model for (III,Mn)V diluted magnetic semiconductors (DMS’s) is here discussed using Monte Carlo simulations. This effort is a continuation of previous work [G. Alvarez et al., Phys. Rev. Lett. 89, 277202 (2002)] where the static properties of the model were studied. The present results support the view that the relevant regime of J/t (standard notation) is that of intermediate coupling, where carriers are only partially trapped near Mn spins, and locally ordered regions (clusters) are present above the Curie temperature TC. This conclusion is based on the calculation of the resistivity vs temperature, that shows a soft metal-to-insulator transition near TC, as well on the analysis of the density-of-states and optical conductivity. In addition, in the clustered regime a large magnetoresistance is observed in simulations. Formal analogies between DMS’s and manganites are also discussed.

  • Received 18 March 2003

DOI:https://doi.org/10.1103/PhysRevB.68.045202

©2003 American Physical Society

Authors & Affiliations

G. Alvarez and E. Dagotto

  • National High Magnetic Field Lab and Department of Physics, Florida State University, Tallahassee, Florida 32310, USA

References (Subscription Required)

Click to Expand
Issue

Vol. 68, Iss. 4 — 15 July 2003

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×