Tunneling spectroscopy of a quantum dot through a single impurity

Erik Lind, Boel Gustafson, Ines Pietzonka, and Lars-Erik Wernersson
Phys. Rev. B 68, 033312 – Published 30 July 2003
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Abstract

A single impurity inside a resonant tunneling diode is used to perform tunneling spectroscopy on an adjacent electrostatically defined vertical quantum dot. This results in tunneling between two zero-dimensional systems, measured as a set of sharp peaks in the current-voltage spectrum for finite bias. Magnetic-field-dependent measurements show that the angular momentum of the tunneling electrons is conserved during the tunneling process. Both ground and excited states are probed. The effect of temperature is also investigated, exhibiting a peak broadening that is smaller than 1 kT.

  • Received 17 March 2003

DOI:https://doi.org/10.1103/PhysRevB.68.033312

©2003 American Physical Society

Authors & Affiliations

Erik Lind*, Boel Gustafson, Ines Pietzonka, and Lars-Erik Wernersson§

  • Solid State Physics/Nanometer Structure Consortium, Box 118, S-22100 Lund, Sweden

  • *Email address: Erik.Lind@ftf.lth.se
  • Present address: Ericsson Mobile Platforms, S-22183 Lund, Sweden.
  • Present address: OSRAM Opto Semiconductors GmbH, D-93049 Regensburg, Germany.
  • §Present address: Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556.

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Vol. 68, Iss. 3 — 15 July 2003

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