Direct determination of the absolute electron density of nanostructured and disordered materials at sub-10-nm resolution

Jianwei Miao, James E. Amonette, Yoshinori Nishino, Tetsuya Ishikawa, and Keith O. Hodgson
Phys. Rev. B 68, 012201 – Published 30 July 2003
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Abstract

We report the development of a novel experimental approach to the direct determination of the absolute electron density of nanostructured and disordered materials. By calibrating the incident coherent x-ray flux and the diffraction pattern intensity and using the oversampling method, we have directly determined the absolute electron density of a porous silica particle at 9nm resolution. This general approach can be used for the quantitative characterization of nanocrystals and noncrystalline materials at nanometer or better resolution.

  • Received 9 May 2003

DOI:https://doi.org/10.1103/PhysRevB.68.012201

©2003 American Physical Society

Authors & Affiliations

Jianwei Miao1,*, James E. Amonette2, Yoshinori Nishino3, Tetsuya Ishikawa3, and Keith O. Hodgson1,4

  • 1Stanford Synchrotron Radiation Laboratory, Stanford Linear Accelerator Center, Stanford University, Stanford, California 94309-0210, USA
  • 2Pacific Northwest National Laboratory, Richland, Washington 99352, USA
  • 3SPring-8/RIKEN, 1-1-1, Kouto, Mikazuki, Sayo-gun, Hyogo 679-5148, Japan
  • 4Department of Chemistry, Stanford University, Stanford, California 94305, USA

  • *Email address: miao@ssrl.slac.stanford.edu.

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Vol. 68, Iss. 1 — 1 July 2003

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