Nonlinear behavior of photoabsorption in hexagonal nitride quantum wells due to free carrier screening of the internal fields

S. Kalliakos, P. Lefebvre, and T. Taliercio
Phys. Rev. B 67, 205307 – Published 8 May 2003
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Abstract

We investigate the effects of large electron-hole pair densities on the energy spectra of quantum wells based on hexagonal group-III nitrides, such as GaN/AlxGa1xN or InyGa1yN/GaN systems. More specifically, we solve self-consistently the Schrödinger and Poisson equations in order to calculate the changes in emission and absorption spectra, induced by the screening of the large internal electric fields that are present in these systems. In particular, we find that pair densities of a few times 1012cm2 induce not only a blueshift of the fundamental transition but also a significant enhancement of the absorption coefficient, in the region corresponding to transitions between excited states. We estimate the typical optical power densities necessary to induce such effects.

  • Received 29 April 2002

DOI:https://doi.org/10.1103/PhysRevB.67.205307

©2003 American Physical Society

Authors & Affiliations

S. Kalliakos, P. Lefebvre, and T. Taliercio

  • Groupe d’Etude des Semiconducteurs, CNRS, Université Montpellier II, Case Courrier 074, 34095 Montpellier Cedex 5, France

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Vol. 67, Iss. 20 — 15 May 2003

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