Field dependence of the carrier occupation in double-quantum-well superlattices

P. Kleinert, L. Schrottke, H. T. Grahn, and V. V. Bryksin
Phys. Rev. B 67, 195306 – Published 6 May 2003
PDFExport Citation

Abstract

The field-dependent carrier redistribution is calculated for double-quantum-well superlattices. Kinetic equations for the canonically transformed density matrix are solved analytically. At prevented crossings, when the levels of different quantum wells are aligned by the electric field, an appreciable field-induced carrier redistribution is predicted to occur. With increasing electric field, the subband populations change gradually and the levels exchange their role with respect to the ground state. This predicted carrier redistribution is compared with experimental results.

  • Received 8 May 2002

DOI:https://doi.org/10.1103/PhysRevB.67.195306

©2003 American Physical Society

Authors & Affiliations

P. Kleinert*, L. Schrottke, and H. T. Grahn

  • Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany

V. V. Bryksin

  • Physical Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia

  • *Email address: kl@pdi-berlin.de

References (Subscription Required)

Click to Expand
Issue

Vol. 67, Iss. 19 — 15 May 2003

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×