Theoretical study of light-emission properties of amorphous silicon quantum dots

Kengo Nishio, Junichiro Kōga, Toshio Yamaguchi, and Fumiko Yonezawa
Phys. Rev. B 67, 195304 – Published 5 May 2003
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Abstract

In order to clarify the mechanism of the photoluminescence (PL) from amorphous silicon quantum dots (a-Si QDs), we calculate, in the tight-binding scheme, the emission spectra and the radiative recombination rate P of the direct band-to-band recombination process. For a-Si QDs smaller than 2.4 nm in diameter, our calculations beautifully reproduce the peak energy EPL of the experimental PL peak [N.-M. Park et al., Phys. Rev. Lett. 86, 1355 (2001)]. Our analysis also show that (i) the emission energy can be tuned into the visible range of light from red to blue by controlling the sizes of a-Si QDs, and that (ii) P calculated for a-Si QDs is higher by two to three orders of magnitude than that for crystalline Si QDs. From these results, we assert that a-Si QDs are promising candidates for visible, tunable, and high-performance light-emitting devices.

  • Received 13 December 2002

DOI:https://doi.org/10.1103/PhysRevB.67.195304

©2003 American Physical Society

Authors & Affiliations

Kengo Nishio* and Junichiro Kōga

  • Graduate School of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan

Toshio Yamaguchi

  • Department of Physics, Tokyo Women’s Medical University, 8-1 Kawadacho, Shinjuku-ku, Tokyo 162-8666, Japan

Fumiko Yonezawa

  • Department of Physics, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan

  • *Email address: knishio@rk.phys.keio.ac.jp

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Issue

Vol. 67, Iss. 19 — 15 May 2003

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