Spin-dependent resonant tunneling between coupled levels in parabolic wells under crossed fields

The effect of spin polarization on the electronic properties of a parabolic quantum well (PQW) subject to external crossed fields is studied. The barriers of PQW are made of a diluted magnetic semiconductor. The electric field is applied in the growth direction and the magnetic field is perpendicular to it. An interesting new feature of this system is the existence of a strong spin dependent resonant tunneling related to a particular value of these applied fields. When it occurs, the effective potential turns out to be similar to a double quantum well. We discuss the similarities of our theoretical model with the system of the spin filter device.