Abstract
We have investigated the electrical resistivity of the intermediate valence narrow-gap semiconductor at temperatures below 80 K and under pressure in the range between 1 bar and 70 kbar. We report on a continuous suppression of the gap under pressure, and on the observation of a critical point at characterizing the pressure induced transition from a Kondo insulator below to a metallic heavy fermion liquid well above In the metallic phase close to strong indications for a non-Fermi-liquid region, in which the electrical resistivity can be described by a power law with were observed.
- Received 17 December 2002
DOI:https://doi.org/10.1103/PhysRevB.67.172406
©2003 American Physical Society