Phase and intensity dependence of the dynamical Franz-Keldysh effect

C. J. Dent, B. N. Murdin, and I. Galbraith
Phys. Rev. B 67, 165312 – Published 16 April 2003
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Abstract

We present theoretical results on the nonlinear optics of semiconductor quantum wells in intense THz electric fields (the dynamic Franz-Keldysh effect or DFKE). The absorption spectra show a rich variety of behavior, including THz replicas of the 2p exciton and THz sidebands of the 1s exciton. We calculate the dependence of these features on the phase and intensity of the THz field using the extended semiconductor Bloch equations, and discuss the relevance of our results to future experiments. The 1s-sideband absorption feature shows a strong dependence on the phase of the THz field, and phase averages to zero. We also discuss the relative advantages and disadvantages of reflectivity and absorption spectroscopies for probing the DFKE.

  • Received 25 November 2002

DOI:https://doi.org/10.1103/PhysRevB.67.165312

©2003 American Physical Society

Authors & Affiliations

C. J. Dent1, B. N. Murdin2, and I. Galbraith1,*

  • 1School of Engineering and Physical Sciences, David Brewster Building, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom
  • 2Department of Physics, University of Surrey, Guildford GU2 7XH, United Kingdom

  • *Electronic address: i.galbraith@hw.ac.uk

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Issue

Vol. 67, Iss. 16 — 15 April 2003

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