Giant enhancement of polariton relaxation in semiconductor microcavities by polariton-free carrier interaction: Experimental evidence and theory

A. I. Tartakovskii, D. N. Krizhanovskii, G. Malpuech, M. Emam-Ismail, A. V. Chernenko, A. V. Kavokin, V. D. Kulakovskii, M. S. Skolnick, and J. S. Roberts
Phys. Rev. B 67, 165302 – Published 2 April 2003
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Abstract

Very large changes in the population distributions of microcavity polaritons are reported under conditions of simultaneous resonant and nonresonant excitation. The strong relaxation bottleneck, which results in weak emission from the lower polariton branch for resonant excitation alone, is fully suppressed if additional nonresonant excitation is employed. By comparison with theory, the massive enhancement of the polariton relaxation is shown to arise from scattering of polaritons by free carriers, present in quantum wells due to residual doping, which are then heated by the nonresonant excitation.

  • Received 30 January 2003

DOI:https://doi.org/10.1103/PhysRevB.67.165302

©2003 American Physical Society

Authors & Affiliations

A. I. Tartakovskii1,2, D. N. Krizhanovskii1, G. Malpuech3, M. Emam-Ismail2, A. V. Chernenko1, A. V. Kavokin4, V. D. Kulakovskii1, M. S. Skolnick2, and J. S. Roberts5

  • 1Institute of Solid State Physics, RAS, 142432 Chernogolovka, Russia
  • 2Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
  • 3Department of Physics and Astronomy, University of Southampton, SO17 1BJ, United Kingdom
  • 4LASMEA, CNRS-Université Clermont-II, 63177 Aubière Cedex, France
  • 5Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom

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Vol. 67, Iss. 16 — 15 April 2003

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