Temperature-dependent electron mobility and large polaron interpretation in Bi12SiO20

Marc Wintermantel and Ivan Biaggio
Phys. Rev. B 67, 165108 – Published 24 April 2003
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Abstract

The electron band mobility in Bi12SiO20 is determined down to 100 K by the holographic time of flight method. Data are presented for different crystals of different origins in the temperature range between 100 and 500 K. The observed mobility rises from 1.7cm2V1s1 at 500 K to 10cm2V1s1 at 190 K, and decreases again at lower temperature. We show that the data correspond to an intrinsic band mobility between 190 and 500 K. The temperature dependence of the mobility can be reproduced in this temperature range with a large polaron model that derives all its parameters from the experimental phonon spectrum of the material. A deviation from the large polaron prediction that takes place between 250 and 190 K, depending on the sample, can be ascribed to the influence of defects or impurities.

  • Received 23 December 2002

DOI:https://doi.org/10.1103/PhysRevB.67.165108

©2003 American Physical Society

Authors & Affiliations

Marc Wintermantel and Ivan Biaggio*

  • Nonlinear Optics Laboratory, Institute of Quantum Electronics, Swiss Federal Institute of Technology, ETH Hönggerberg, CH-8093 Zürich, Switzerland

  • *Present address: Department of Physics, Lehigh University, Bethlehem, Pennsylvania 18015.

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Issue

Vol. 67, Iss. 16 — 15 April 2003

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