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Pseudopotential calculation of the excitonic fine structure of million-atom self-assembled In1xGaxAs/GaAs quantum dots

Gabriel Bester, Selvakumar Nair, and Alex Zunger
Phys. Rev. B 67, 161306(R) – Published 30 April 2003
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Abstract

The atomistic pseudopotential method is used to accurately predict the electron-hole exchange-induced fine structure (FS) and polarization anisotropy in million-atom In1xGaxAs/GaAs quantum dots of various shapes and compositions. The origin of the FS splittings is clarified using a simple model where the effects of atomistic symmetry and spin-orbit interaction are separately evident. Remarkably, polarization anisotropy and FS splittings are shown to occur, even in a cylindrically symmetric dot. Furthermore, “dark excitons” are predicted to be partially allowed. Trends in splittings among different shapes and compositions are revealed.

  • Received 16 January 2003

DOI:https://doi.org/10.1103/PhysRevB.67.161306

©2003 American Physical Society

Authors & Affiliations

Gabriel Bester1, Selvakumar Nair2, and Alex Zunger1

  • 1National Renewable Energy Laboratory, Golden, Colorado 80401
  • 2ECAN, University of Toronto, Toronto, Canada M5S3E3

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Vol. 67, Iss. 16 — 15 April 2003

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