Multiband electron resonant Raman scattering in quantum wells in a magnetic field

V. López-Richard, G.-Q. Hai, C. Trallero-Giner, and G. E. Marques
Phys. Rev. B 67, 155320 – Published 28 April 2003
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Abstract

A theoretical model has been developed for the electronic resonant Raman scattering processes in direct band zinc blende–type semiconductor quantum wells in a magnetic field. In order to take into account the spin-flip transitions, anomalous behavior of the Landau levels and the Landè g factor, an 8×8 Kane-Weiler Hamiltonian model has been considered for the evaluation of the Raman scattering amplitude. Elements concerning the selection rules of resonant inelastic light scattering in quantum well systems are reported. The multiband model predicts conditions for resonant spin-flip Raman processes in several light scattering configurations for crossed and parallel polarization. Special emphasis is given to the effects of the interlevel coupling and mixing within the conduction subband and their relation to spin-flip and inter-Landau level transitions. Symmetry and electronic properties of the level structure in the first conduction subband as well as anomalous Landè factors are discussed in terms of complementary Raman scattering configurations, Fermi energy, and multiband parameters.

  • Received 19 July 2002

DOI:https://doi.org/10.1103/PhysRevB.67.155320

©2003 American Physical Society

Authors & Affiliations

V. López-Richard and G.-Q. Hai

  • Instituto de Física de São Carlos, Universidade de São Paulo, 13560-970, São Carlos, São Paulo, Brazil

C. Trallero-Giner

  • Departamento de Física Teórica, Universidad de La Habana, San Lázaro y L, 10400, La Habana, Cuba

G. E. Marques

  • Departamento de Física, Universidade Federal de São Carlos, 13565-905, São Carlos, São Paulo, Brazil

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Vol. 67, Iss. 15 — 15 April 2003

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