Doping dependence of the electronic structure and the Raman-active modes in La2xBaxCuO4

T. Thonhauser and C. Ambrosch-Draxl
Phys. Rev. B 67, 134508 – Published 4 April 2003
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Abstract

We studied the doping dependence of the electronic structure and the Raman-active phonon modes in the high-temperature superconductor La2xBaxCuO4. Thereby, doping concentrations from the undoped case (x=0) up to the overdoped case (x=0.14) were considered. All obtained phonon frequencies compare well to published data for La2xSrxCuO4. For optimal doping of xopt0.12 the A1g Raman spectra show a huge increase in intensity for certain scattering geometries indicating enhanced electron-phonon coupling. The effects of doping on the density of states, Fermi surface, and electric-field gradients were also investigated.

  • Received 6 February 2002

DOI:https://doi.org/10.1103/PhysRevB.67.134508

©2003 American Physical Society

Authors & Affiliations

T. Thonhauser and C. Ambrosch-Draxl

  • Institut für Theoretische Physik, Universität Graz, Universitätsplatz 5, A-8010 Graz, Austria

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Vol. 67, Iss. 13 — 1 April 2003

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