Nonlinear emission due to electron-polariton scattering in a semiconductor microcavity

A. Qarry, G. Ramon, R. Rapaport, E. Cohen, Arza Ron, A. Mann, E. Linder, and L. N. Pfeiffer
Phys. Rev. B 67, 115320 – Published 19 March 2003
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Abstract

Electron-polariton scattering is studied by photoluminescence spectroscopy in a GaAs/AlGaAs microcavity with an embedded quantum well containing a variable density electron gas. The photoluminescence spectra are measured as a function of two parameters: (a) The detuning energy between the cavity-confined photon and the heavy exciton and (b) the intensity of the laser that generates the electron gas. The integrated photoluminescence intensity varies nonlinearly with increasing electron density, showing a large enhancement that reaches a factor of 35 over the intensity observed without an electron gas. The spectra are analyzed in the strong coupling regime, by calculating the energy and electron gas density dependence of the electron-polariton scattering rates. The most effective scattering process is the dissociation of the charged exciton component in the polariton states.

  • Received 2 December 2002

DOI:https://doi.org/10.1103/PhysRevB.67.115320

©2003 American Physical Society

Authors & Affiliations

A. Qarry1,*, G. Ramon2, R. Rapaport3, E. Cohen1, Arza Ron1, A. Mann2, E. Linder1, and L. N. Pfeiffer3

  • 1Solid State Institute, Technion–Israel Institute of Technology, Haifa 32000, Israel
  • 2Department of Physics, Technion–Israel Institute of Technology, Haifa 32000, Israel
  • 3Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974

  • * Electronic address: angie@tx.technion.

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Vol. 67, Iss. 11 — 15 March 2003

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